? 2016 ixys corporation, all rights reserved IXYL60N450 v ces = 4500v i c110 = 38a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 3.30v ds100578a(4/16) symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 4500 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = 4000v, v ge = 0v 25 a note 1, t j = 90c 75 a i ges v ce = 0v, v ge = 20v 300 na v ce(sat) i c = 60a, v ge = 15v, note 1 2.64 3.30 v t j = 125c 3.46 v high voltage xpt tm igbt g = gate e = emitter c = collector isoplus i5-pak tm g e c isolated tab symbol test conditions maximum ratings v ces t j = 25c to 150c 4500 v v cgr t j = 25c to 150c, r ge = 1m ? 4500 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 90 a i c110 t c = 110c 38 a i cm t c = 25c, 1ms 680 a ssoa v ge = 15v, t vj = 125c, r g = 4.7 ? i cm = 120 a (rbsoa) clamped inductive load 1500 v p c t c = 25c 417 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c f c mounting force 40..120 / 9..27 n/lb v isol 50/60 hz, rm, t = 1min 4000 v~ weight 8 g (electrically isolated tab) features ? silicon chip on direct-copper bond (dcb) substrate ? isolated mounting surface ? 4000v~ electrical isolation ? high blocking voltage ? high peak current capability ? low saturation voltage advantages ? low gate drive requirement ? high power density applications ? switch-mode and resonant-mode power supplies ? uninterruptible power supplies (ups) ? laser generators ? capacitor discharge circuits ? ac switches preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXYL60N450 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 isoplus i5-pak tm (ixyl) outline 1 = gate 2 = source 3 = drain 4 = isolated sym inches millimeter min max min max a 0.190 0.205 4.83 5.21 a1 0.102 0.118 2.59 3.00 a2 0.046 0.055 1.17 1.40 b 0.045 0.055 1.14 1.40 b1 0.063 0.072 1.60 1.83 b2 0.058 0.068 1.47 1.73 c 0.020 0.029 0.51 0.74 d 1.020 1.040 25.91 26.42 e 0.770 0.799 19.56 20.29 e 0.150 bsc 3.81 bsc e1 0.450 bsc 11.43 bsc l 0.780 0.820 19.81 20.83 l1 0.080 0.102 2.03 2.59 q 0.210 0.235 5.33 5.97 q1 0.490 0.513 12.45 13.03 r 0.150 0.180 3.81 4.57 r1 0.100 0.130 2.54 3.30 s 0.668 0.690 16.97 17.53 t 0.801 0.821 20.34 20.85 u 0.065 0.080 1.65 2.03 e s b1 d b2 q q1 u t a1 e1 c r r1 a2 l1 l 1 3 2 4 b a e symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, note 1 32 54 s c ies 7530 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 270 pf c res 115 pf r gi integrated gate input resistance 5.0 ????????????????????? q g(on) 366 nc q ge i c = 60a, v ge = 15v, v ce = 1000v 48 nc q gc 138 nc t d(on) 55 ns t r 450 ns t d(off) 450 ns t f 1360 ns t d(on) 60 ns t r 664 ns t d(off) 510 ns t f 1070 ns r thjc 0.30 c/w r thcs 0.15 c/w resistive switching times, t j = 125c i c = 60a, v ge = 15v v ce = 960v, r g = 4.7 ? resistive switching times, t j = 25c i c = 60a, v ge = 15v v ce = 960v, r g = 4.7 ? notes: 1. pulse test, t < 300 ? s, duty cycle, d < 2%. 2. device must be heatsunk for high-temperature leakage current measurements to avoid thermal runaway. preliminary technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2016 ixys corporation, all rights reserved IXYL60N450 fig. 1. output characteristics @ t j = 25oc 0 20 40 60 80 100 120 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 v ce - volts i c - amperes v ge = 25v 19v 15v 13v 11v 7v 5v 9v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 0 5 10 15 20 25 v ce - volts i c - amperes v ge = 25v 19v 15v 13v 7v 9v 11v fig. 3. output characteristics @ t j = 125oc 0 20 40 60 80 100 120 0123456 v ce - volts i c - amperes v ge = 25v 19v 15v 13v 11v 5v 7v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 120a i c = 30a i c = 60a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1 2 3 4 5 6 7 6 7 8 9 101112131415 v ge - volts v ce - volts i c = 120a t j = 25oc 60a 30a fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 200 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 v ge - volts i c - amperes t j = 125oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXYL60N450 fig. 7. transconductance 0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 120 140 160 180 200 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. reverse-bias safe operating area 0 20 40 60 80 100 120 140 500 1000 1500 2000 2500 3000 3500 4000 4500 v ce - volts i c - amperes t j = 125oc r g = 4.7 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 400 q g - nanocoulombs v ge - volts v ce = 1000v i c = 60a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mh z c ies c oes c res ixys ref: y_60n450(h9-645) 11-21-13 fig. 11. maximum transient thermal impedance 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 pulse width - seconds z (th)jc - k / w
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